Raman MoTe2

MoTe2 Raman spectrum

Yet another member of the two-dimensional family is molybdenum ditelluride. Like its other transition metal dichalcogenide siblings, MoTe2 is a semiconductor and when exfoliated to a monolayer shows a direct band gap of approximately 1.1 eV. In this article, we discuss the MoTe2 Raman spectrum. The MoTe2 Raman spectrum shows Read more…

MoS2 tunable band gap

A team of researchers from Purdue University and Global Foundries semiconductor foundry, led by Associate Professor Zhihong Chen write in Nano Letters regarding the band gap tenability of bilayer MoS2. Why bilayer MoS2 It is well known that bilayer graphene has a tunable band gap, in the range of 0-300meV. Read more…

Superacid makes brighter MoS2

Writing in Science, a group of scientists led by Berkeley professor Ali Javey report on significant improvement of quantum yield (QY) of monolayers of MoS2 when coated with the superacid bis(trifluoromethane)sulfonimide (TFSI). More Light Monolayers of transition metal dichalcogenides have been steadily attracting increasing attention in field-effect devices as well as in optical Read more…

Review article on atomically thin MoS2 and its applications in sensing

Editorial  Writing in Nanoscale scientists from the universities in Singapore and China review the two-dimensional material molybdenum disulfide. The material has been extensively studied in the past five years since, unlike graphene, has a sizeable bandgap which make it attractive for applications in electronics. Through their exhaustive 40-page article, the authors provide Read more…

Reducing contact resistance in WS2

Editorial Writing in Applied Materials & Interfaces  scientists from the Sejong University, Seoul report their technique in reducing contact resistance in tungsten disulfide (WS2) field-effect transistors with standard Cr/Au contacts. Although there are several techniques to do this (e.g. using scandium, or phase-engineering) this technique is noted for being particularly straightforward. Read more…

Single layer WSe2 actually has indirect band gap

Writing in Nano Letters a team  led by Professor Chih-Kang Shih from the University of Texas at Austin studied the electronic structures of single layer transition metal dichalcogenides WSe2 and WS2, by scanning tunneling spectroscopy. It is generally well understood within academia that monolayer semiconductor transition metals dichalcogenides, such as WS2, WSe2, Read more…

WSe2 Raman spectoscopy

Tungsten diselenide is another layered transition metal dichalcogenide. Like more of the other TMDCs, it is a semiconductor with a band gap in the infrared region. In this article we review the Raman of WSe2 monolayer. Like MoS2 and WS2, the lattice structure of WSe2 is also trigonal prismatic, while Read more…