Yet another member of the two-dimensional family is molybdenum ditelluride. Like its other transition metal dichalcogenide siblings, MoTe2 is a semiconductor and when exfoliated to a monolayer shows a direct band gap of approximately 1.1 eV. In this article, we Read more…
We are excited to announce that some of our 2D single crystals will be part of the upcoming exhibition at the Manchester Museum of Science and Industry (MOSI) in the UK. MOSI is a museum devoted to the development of science, Read more…
We are excited to announce that we are sponsoring this year’s “Graphene NOWNANO Summer Conference 2016”. This yearly event is organized by PhD students which are part of the North-West Centre for Doctoral Training for Graphene and Nanoscience, which includes the Read more…
Today we are launching another highly sought after single crystal. Molybdenum disulfide has long been our flagship product – this transitional metal dichalcogenide has excited scientists in the two-dimensional field since its initial exfoliation and has continues to mesmerise us with Read more…
A team of researchers from Purdue University and Global Foundries semiconductor foundry, led by Associate Professor Zhihong Chen write in Nano Letters regarding the band gap tenability of bilayer MoS2. Why bilayer MoS2 It is well known that bilayer graphene Read more…
Happy new year from us here at Manchester Nanomaterials – let’s hope it will be a productive one!
Writing in Science, a group of scientists led by Berkeley professor Ali Javey report on significant improvement of quantum yield (QY) of monolayers of MoS2 when coated with the superacid bis(trifluoromethane)sulfonimide (TFSI). More Light Monolayers of transition metal dichalcogenides have been steadily attracting Read more…
Editorial Writing in Nanoscale scientists from the universities in Singapore and China review the two-dimensional material molybdenum disulfide. The material has been extensively studied in the past five years since, unlike graphene, has a sizeable bandgap which make it attractive for Read more…
Editorial Writing in Applied Materials & Interfaces scientists from the Sejong University, Seoul report their technique in reducing contact resistance in tungsten disulfide (WS2) field-effect transistors with standard Cr/Au contacts. Although there are several techniques to do this (e.g. using scandium, Read more…
Writing in RSC Advances, a team from Hangzhou Dianzi University led by Weitao Su demonstrates a fast and easy way in order to improve the photoluminescence yield of monolayer molybdenum disulfide. The methodology begins with the typical micro mechanical exfoliation of Read more…