Review article on atomically thin MoS2 and its applications in sensing

Editorial  Writing in Nanoscale scientists from the universities in Singapore and China review the two-dimensional material molybdenum disulfide. The material has been extensively studied in the past five years since, unlike graphene, has a sizeable bandgap which make it attractive for applications in electronics. Through their exhaustive 40-page article, the authors provide Read more…

Reducing contact resistance in WS2

Editorial Writing in Applied Materials & Interfaces  scientists from the Sejong University, Seoul report their technique in reducing contact resistance in tungsten disulfide (WS2) field-effect transistors with standard Cr/Au contacts. Although there are several techniques to do this (e.g. using scandium, or phase-engineering) this technique is noted for being particularly straightforward. Read more…